With the continuous development of technologies such as electric vehicles, smart grids, nuclear power, solar energy, wind energy, and marine, aerospace, aerospace, and high-speed rail transit technologies, higher requirements are placed on the performance of power devices. The emergence of third-generation semiconductor materials meets the higher demand for future device use. It is predicted that third-generation semiconductor materials can replace the first-generation semiconductor materials and become more widely used in the industry.
The third-generation semiconductor materials have high band gap, high breakdown electric field, thermal conductivity, electron saturation rate and high radiation resistance, and are suitable for high temperature, high frequency, radiation resistant and high power devices. The main representative materials are silicon carbide, gallium nitride, zinc oxide, diamond, aluminum nitride and so on.
Among them, the silicon carbide material is superior to silicon in terms of its index, and its forbidden band width is almost three times that of silicon. The theoretical working temperature can reach 600 °C, which is much higher than the operating temperature of silicon devices. The technology has the highest maturity and the most potential application.